pkn400 2 n - ch 4 0v fast switching mosfets symbol parameter rating units v ds drain - source voltage 4 0 v v gs gate - sou r ce voltage 2 0 v i d @t a =25 con tinuous drain current, v gs @ 10v 1 5 a i d @t a = 7 0 continuous drain current, v gs @ 10v 1 4.1 a i dm pulsed drain current 2 16 a p d @t a =25 total power dissipation 3 1.25 w t stg storage temperature range - 55 to 150 t j operating junction temperature range - 55 to 150 symbol parameter typ. max. unit r ja th ermal resistance junction - a mbient 1 --- 1 00 /w r j c thermal resistance junction - case 1 --- 6 0 /w bvdss rds on id 4 0 v 3 2 m 5 a the pkn400 2 is the high cell density trenched n - ch mosfets, which provides excellent rdson and efficiency for most of the small power switching and load switch applications. the pkn400 2 meet the rohs and green product requiremen t with full functio n reliability approved. ? green device available ? super low gate charge ? excellent cdv/dt effect decline ? advanced high cell density trench technology description absolute maximum ratings thermal data sot 23 pin config uration p roduct summa ry 1 www.paceleader.tw
symbol parameter conditions min. typ. max. unit bv dss drain - source breakdown voltage v gs =0v , i d =250ua 4 0 --- --- v e bv dss / e t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.0 32 --- v/ r ds(on) static drain - source on - resistance 2 v gs =10v , i d = 4 a --- --- 3 2 m : v gs =4.5v , i d =3 a --- --- 45 v gs(th) gate threshold voltage v g s =v ds , i d =250ua 1.0 --- 2.5 v e v gs(th) v gs(th) temperature coefficient --- - 4. 5 --- mv/ i dss drain - source leakage current v ds = 32 v , v gs =0v , t j =25 --- --- 1 ua v ds = 32 v , v gs =0v , t j =55 --- --- 5 i gss gate - source leakage current v gs = f 20v , v ds = 0v --- --- f 100 na gfs forward transconductance v ds = 5 v , i d = 4 a --- 12 --- s r g gate resistance v ds = 0 v , v gs =0v , f=1mhz --- 2. 6 --- : q g total gate charge (4.5 v) v ds = 15 v , v gs = 4. 5v , i d = 3 a --- 5.5 --- nc q gs gate - source charge --- 1.25 --- q gd gate - drain charge --- 2.5 --- t d(on) turn - on delay time v dd =15 v , v gs =10v , r g = 3.3 : i d =1 a --- 8.9 --- ns t r rise time --- 2.2 --- t d(off) turn - off delay time --- 41 --- t f fall time --- 2.7 --- c iss input capacitance v ds =1 5v , v gs =0v , f=1mhz --- 5 93 --- pf c oss output capacitance --- 76 --- c rss reverse transfer capacitance --- 56 --- symbol parameter conditions min. typ. max. unit i s continuous source current 1, 4 v g =v d =0v , force current --- --- 5 a i sm pulsed source current 2, 4 --- -- - 16 a v sd diode forward voltage 2 v gs =0v , i s = 1 a , t j =25 --- --- 1.2 v note : 1.the data tested by surface mounted on a 1 inch 2 fr - 4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3 .the power dissipation is limited by 150 junction temperature 4 .the data is theoretically the same as i d and i dm , i n real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics pkn400 2 n - ch 4 0v fast switching mosfets 2 www.paceleader.tw
0 3 6 9 12 15 0 0.5 1 1.5 2 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 0 2 4 6 8 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0 2.5 5 7.5 10 0 2.5 5 7.5 10 q g , total gate charge (nc) v gs gate to source voltage (v) v ds =15v i d =3a 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) (v) typical characterist ics fig.1 typical output characteristics fig.2 on - resistance v s . gate - source voltage fig. 3 fo rward c haracteristics o f r ever se diode fig. 4 gate - c harge c haracteristics fig. 5 normalized v gs (th) v s . t j fig. 6 normalized r dson v s . t j pkn400 2 n - ch 4 0v fast switching mosfets 3 www.paceleader.tw 0 3 6 9 12 15 0 0.5 1 1.5 2 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 0 2 4 6 8 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0 2.5 5 7.5 10 0 2.5 5 7.5 10 q g , total gate charge (nc) v gs gate to source voltage (v) v ds =15v i d =3a 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( w ) normalized v gs(th) (v)
4 10 100 1000 1 5 9 13 17 21 25 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 v ds (v) i d (a) t a =25 single pulse 1s 10ms 100ms dc 100us 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse t d ( o n ) t r t o n t d ( o f f ) t f t o f f v d s v g s 9 0 % 1 0 % fig . 8 safe o perating a rea fig. 9 normalized maximum transient thermal impedance fig. 7 capacitance fig. 10 switching time w aveform fig. 11 gate charge w aveform pkn400 2 n - ch 4 0v fast switching mosfets 4 www.paceleader.tw 10 100 1000 1 5 9 13 17 21 25 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 v ds (v) i d (a) t a =25 w single pulse 1s 10ms 100ms dc 100us 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse t d ( o n ) t r t o n t d ( o f f ) t f t o f f v d s v g s 9 0 % 1 0 %
pkn400 2 n - ch 4 0v fast switching mosfets p a c k a g e i n f o r m a t i o n ( s o t - 2 3 ) 5 www.paceleader.tw
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